Fabrication and enhanced field emission properties of novel silicon nanostructures
نویسندگان
چکیده
We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/lm under current density of 0.01 mA/cm for two-tier patterns separated by respective 5 lm and 2 lm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices. 2010 Elsevier Ltd. All rights reserved.
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